A low-noise, 900-MHz VCO in 0.6-μm CMOS

Author

Park, Chan-Hong ; Kim, Beomsup

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

Volume

34

Issue

5

fYear

1999

fDate

5/1/1999 12:00:00 AM

Firstpage

586

Lastpage

591

Abstract

This paper describes a low-noise, 900-MHz, voltage-controlled oscillator (VCO) fabricated in a 0.6-μm CMOS technology. The VCO consists of four-stage fully differential delay cells performing full switching. It utilizes dual-delay path techniques to achieve high oscillation frequency and obtain a wide tuning range. The VCO operates at 750 MHz to 1.2 GHz, and the tuning range is as large as 50%. The measured results of the phase noise are -101 dBc/Hz at 100-kHz offset and -117 dBc/Hz at 600-kHz offset from the carrier frequency. This value is comparable to that of LC-based integrated oscillators. The oscillator consumes 10 mA from a 3.0-V power supply. A prototype frequency synthesizer with the VCO is also implemented in the same technology, and the measured phase noise of the synthesizer is -113 dSc/Hz at 100-kHz offset

Keywords

CMOS analogue integrated circuits; circuit tuning; delay circuits; frequency synthesizers; phase noise; voltage-controlled oscillators; 0.6 micron; 10 mA; 3.0 V; 750 MHz to 1.2 GHz; CMOS; VCO; carrier frequency; dual-delay path techniques; four-stage fully differential delay cells; frequency synthesizer; full switching; oscillation frequency; phase noise; tuning range; CMOS technology; Delay; Frequency measurement; Noise measurement; Phase measurement; Phase noise; Power supplies; Prototypes; Tuning; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.760367

Filename

760367