Complete On-Wafer Noise-Figure Characterization of 60-GHz Differential Amplifiers

Author

Tiemeijer, Luuk F. ; Pijper, Ralf M T ; Van der Heijden, Edwin

Author_Institution

NXP-TSMC Res. Centre, Eindhoven, Netherlands

Volume

58

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

1599

Lastpage

1608

Abstract

In this paper, we show that the differential noise figure of differential amplifiers is better measured directly by using baluns rather than be derived from single-ended measurements. For on-wafer measurements at 60 GHz, this can best be done using RF probes with integrated baluns. To extract the full 4 × 4 noise correlation matrix needed to predict the circuit behavior under any operating condition, this needs to be extended with at least one single-ended noise-figure measurement taken on an individual amplifier. For the experimental two-stage differential amplifier realized in 45-nm node CMOS studied in this paper, we found a noise figure of 3.2 dB. This is, to the best of our knowledge, the lowest noise figure reported at 60 GHz in any CMOS technology thus far.

Keywords

CMOS integrated circuits; baluns; differential amplifiers; integrated circuit measurement; integrated circuit noise; CMOS technology; RF probe; baluns; circuit behavior; differential amplifier; differential noise figure; frequency 60 GHz; noise correlation matrix; noise figure 3.2 dB; on-wafer measurement; on-wafer noise-figure characterization; single-ended noise-figure measurement; size 45 nm; 45-nm node CMOS; 4 $,times,$4 noise correlation matrix; integrated circuits; on-wafer microwave differential noise-figure measurements;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2010.2049167

Filename

5471102