A 3-V GSM baseband transmitter

Author

Wong, Caesar S.

Author_Institution

Mixed Signal Dev., LSI Logic Corp., Milpitas, CA, USA

Volume

34

Issue

5

fYear

1999

fDate

5/1/1999 12:00:00 AM

Firstpage

725

Lastpage

730

Abstract

A dual-channel baseband transmitter has been designed for global system for mobile communications (GSM) cellular phone application. It has been fabricated in a 0.35-μm digital CMOS process as part of a single-chip solution for baseband processing. Each channel consists of a switched-capacitor digital-to-analog converter, a switched-capacitor filter, a class-AB buffer, and an active-RC filter. The lack of on-chip precision capacitors and resistors poses a major challenge in designing these analog building blocks. Another key implementation issue is to maintain the performance of these analog circuits in the presence of substantial substrate noise from the digital signal-processing core. The current consumption is 8.8 mA, and the total active area is 5.1 mm². The channel response meets the Gaussian minimum-shift-keying spectral mask

Keywords

CMOS integrated circuits; cellular radio; digital-analogue conversion; minimum shift keying; mixed analogue-digital integrated circuits; radio transmitters; switched capacitor networks; 0.35 micron; 3 V; 8.8 mA; DSP core; GSM baseband transmitter; GSM cellular phone application; Gaussian MSK spectral mask; SC digital-to-analog converter; active-RC filter; baseband processing; class-AB buffer; digital CMOS process; digital signal-processing core; dual-channel baseband transmitter; minimum-shift-keying; substrate noise; switched-capacitor DAC; switched-capacitor filter; Baseband; CMOS process; Capacitors; Cellular phones; Communication switching; Digital filters; Digital-analog conversion; GSM; Resistors; Transmitters;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.760385

Filename

760385