Title :
A 3-V GSM baseband transmitter
Author_Institution :
Mixed Signal Dev., LSI Logic Corp., Milpitas, CA, USA
fDate :
5/1/1999 12:00:00 AM
Abstract :
A dual-channel baseband transmitter has been designed for global system for mobile communications (GSM) cellular phone application. It has been fabricated in a 0.35-μm digital CMOS process as part of a single-chip solution for baseband processing. Each channel consists of a switched-capacitor digital-to-analog converter, a switched-capacitor filter, a class-AB buffer, and an active-RC filter. The lack of on-chip precision capacitors and resistors poses a major challenge in designing these analog building blocks. Another key implementation issue is to maintain the performance of these analog circuits in the presence of substantial substrate noise from the digital signal-processing core. The current consumption is 8.8 mA, and the total active area is 5.1 mm2 . The channel response meets the Gaussian minimum-shift-keying spectral mask
Keywords :
CMOS integrated circuits; cellular radio; digital-analogue conversion; minimum shift keying; mixed analogue-digital integrated circuits; radio transmitters; switched capacitor networks; 0.35 micron; 3 V; 8.8 mA; DSP core; GSM baseband transmitter; GSM cellular phone application; Gaussian MSK spectral mask; SC digital-to-analog converter; active-RC filter; baseband processing; class-AB buffer; digital CMOS process; digital signal-processing core; dual-channel baseband transmitter; minimum-shift-keying; substrate noise; switched-capacitor DAC; switched-capacitor filter; Baseband; CMOS process; Capacitors; Cellular phones; Communication switching; Digital filters; Digital-analog conversion; GSM; Resistors; Transmitters;
Journal_Title :
Solid-State Circuits, IEEE Journal of
