Title :
Degradation of InGaAs/InP double heterojunction bipolar transistors under electron irradiation
Author :
Bandyopadhyay, A. ; Subramanian, S. ; Chandrasekhar, S. ; Dentai, Andrew G. ; Goodnick, Stephen M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
fDate :
5/1/1999 12:00:00 AM
Abstract :
The dc characteristics of InGaAs/InP double heterojunction bipolar transistors (DHBTs) are studied under high-energy (~1 MeV) electron irradiation up to a fluence of 14.8×1015 electrons/cm 2. The devices show an increase in common-emitter current gain (hfe) at low levels of dose (<1015 electrons/cm2) and a gradual decrease in hfe and an increase in output conductance for higher doses. The decrease in h fe is as much as ~80% at low base currents (~10 μA) after a cumulative dose of 14.8×1015 electrons/cm2. The observed degradation effects in collector current-voltage (I-V) characteristics are studied quantitatively using a simple SPICE-like device model. The overall decrease in hfe is attributed to increased recombination in the emitter-base junction region caused by radiation-induced defects. The defects introduced in the collector-base junction region are believed to be responsible for the observed increase in the output conductance
Keywords :
III-V semiconductors; SPICE; electron beam effects; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; 1 MeV; DC characteristics; InGaAs-InP; InGaAs/InP double heterojunction bipolar transistor; SPICE model; common-emitter current gain; current-voltage characteristics; device degradation; electron irradiation; output conductance; radiation-induced defects; recombination; Bipolar transistors; Degradation; Double heterojunction bipolar transistors; Electrons; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Spontaneous emission; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
