DocumentCode
1501199
Title
Application specific spectral response with CMOS compatible photodiodes
Author
Simpson, Michael L. ; Ericson, M. Nance ; Jellison, Gerald E., Jr. ; Dress, William B. ; Wintenberg, Alan L. ; Bobrek, Miljko
Author_Institution
Oak Ridge Nat. Lab., TN, USA
Volume
46
Issue
5
fYear
1999
fDate
5/1/1999 12:00:00 AM
Firstpage
905
Lastpage
913
Abstract
Several methods are presented for realizing photodiodes with independent spectral responses in a standard CMOS integrated circuit process. Only the masks, materials, and fabrication steps inherent to this standard process were used. The spectral responses of the photodiodes were controlled by (1) using the SiO2 and polycrystalline Si as thin-film optical filters, (2) using photodiodes with different junction depths, and (3) controlling the density of the interfacial trapping centers by choosing which oxide forms the Si/SiO 2 interface. Also presented is an example method for constructing photo-spectrometers using these spectrally-independent photodiodes. This method forms weighted sums of the photodiodes´ outputs to extract spectrographic information
Keywords
electron traps; masks; optical filters; photodetectors; photodiodes; CMOS compatible photodiodes; Si-SiO2; application specific spectral response; fabrication steps; interfacial trapping centers; junction depths; masks; photo-spectrometers; spectral responses; spectrally-independent photodiodes; spectrographic information; thin-film optical filters; weighted sums; CMOS integrated circuits; Charge carrier processes; Optical control; Optical device fabrication; Optical films; Optical filters; Optical materials; Photodiodes; Semiconductor thin films; Thin film circuits;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.760396
Filename
760396
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