• DocumentCode
    1501199
  • Title

    Application specific spectral response with CMOS compatible photodiodes

  • Author

    Simpson, Michael L. ; Ericson, M. Nance ; Jellison, Gerald E., Jr. ; Dress, William B. ; Wintenberg, Alan L. ; Bobrek, Miljko

  • Author_Institution
    Oak Ridge Nat. Lab., TN, USA
  • Volume
    46
  • Issue
    5
  • fYear
    1999
  • fDate
    5/1/1999 12:00:00 AM
  • Firstpage
    905
  • Lastpage
    913
  • Abstract
    Several methods are presented for realizing photodiodes with independent spectral responses in a standard CMOS integrated circuit process. Only the masks, materials, and fabrication steps inherent to this standard process were used. The spectral responses of the photodiodes were controlled by (1) using the SiO2 and polycrystalline Si as thin-film optical filters, (2) using photodiodes with different junction depths, and (3) controlling the density of the interfacial trapping centers by choosing which oxide forms the Si/SiO 2 interface. Also presented is an example method for constructing photo-spectrometers using these spectrally-independent photodiodes. This method forms weighted sums of the photodiodes´ outputs to extract spectrographic information
  • Keywords
    electron traps; masks; optical filters; photodetectors; photodiodes; CMOS compatible photodiodes; Si-SiO2; application specific spectral response; fabrication steps; interfacial trapping centers; junction depths; masks; photo-spectrometers; spectral responses; spectrally-independent photodiodes; spectrographic information; thin-film optical filters; weighted sums; CMOS integrated circuits; Charge carrier processes; Optical control; Optical device fabrication; Optical films; Optical filters; Optical materials; Photodiodes; Semiconductor thin films; Thin film circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.760396
  • Filename
    760396