DocumentCode :
1501199
Title :
Application specific spectral response with CMOS compatible photodiodes
Author :
Simpson, Michael L. ; Ericson, M. Nance ; Jellison, Gerald E., Jr. ; Dress, William B. ; Wintenberg, Alan L. ; Bobrek, Miljko
Author_Institution :
Oak Ridge Nat. Lab., TN, USA
Volume :
46
Issue :
5
fYear :
1999
fDate :
5/1/1999 12:00:00 AM
Firstpage :
905
Lastpage :
913
Abstract :
Several methods are presented for realizing photodiodes with independent spectral responses in a standard CMOS integrated circuit process. Only the masks, materials, and fabrication steps inherent to this standard process were used. The spectral responses of the photodiodes were controlled by (1) using the SiO2 and polycrystalline Si as thin-film optical filters, (2) using photodiodes with different junction depths, and (3) controlling the density of the interfacial trapping centers by choosing which oxide forms the Si/SiO 2 interface. Also presented is an example method for constructing photo-spectrometers using these spectrally-independent photodiodes. This method forms weighted sums of the photodiodes´ outputs to extract spectrographic information
Keywords :
electron traps; masks; optical filters; photodetectors; photodiodes; CMOS compatible photodiodes; Si-SiO2; application specific spectral response; fabrication steps; interfacial trapping centers; junction depths; masks; photo-spectrometers; spectral responses; spectrally-independent photodiodes; spectrographic information; thin-film optical filters; weighted sums; CMOS integrated circuits; Charge carrier processes; Optical control; Optical device fabrication; Optical films; Optical filters; Optical materials; Photodiodes; Semiconductor thin films; Thin film circuits;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.760396
Filename :
760396
Link To Document :
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