Analysis of CIC NPT IGBT´s turn-off operations for high switching current level

Author

Lefebvre, Stéphane ; Miserey, Francis

Author_Institution

ECS ENSEA, Cergy-Pontoise, France

Volume

46

Issue

5

fYear

1999

fDate

5/1/1999 12:00:00 AM

Firstpage

1042

Lastpage

1049

Abstract

For a high switching current level during IGBT´s turn-off process, the simultaneous presence of high current density and high voltage can lead to avalanche generation. A one-dimensional (1-D) analytical model describing the voltage reapplication phase is presented for snubberless turn-off operations with CIC NPT IGBT´s. Without avalanche generation, voltage rate of rise dV_AK/dt at turn-off remains constant. Avalanche generation is investigated on the basis of experimental measurements in combination with numerical simulations. The avalanche mechanism generates electrons in the space charge region delaying the sweeping-out process and increasing the turn-off losses. The avalanche generation can be avoided when the gate drive is slowed even though turn-off losses increase

Keywords

avalanche breakdown; current density; impact ionisation; insulated gate bipolar transistors; losses; power semiconductor switches; power transistors; semiconductor device breakdown; semiconductor device models; space charge; 1D analytical model; CIC NPT IGBT; avalanche generation; charge injection controlled device; high current density; high switching current level; high voltage; nonpunch through IGBT; snubberless turnoff operations; space charge region; turn-off operations; turnoff losses; voltage reapplication phase; Analytical models; Anodes; Charge carrier processes; Current density; Electron emission; Electron mobility; Insulated gate bipolar transistors; Numerical simulation; Thyristors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.760415

Filename

760415