An efficient and accurate compact model for thin-oxide-MOSFET intrinsic capacitance considering the finite charge layer thickness

Author

Liu, Weidong ; Jin, Xiaodong ; King, Yachin ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

46

Issue

5

fYear

1999

fDate

5/1/1999 12:00:00 AM

Firstpage

1070

Lastpage

1072

Abstract

As the gate oxide thickness is vigorously scaled down, quantization-induced charge layer thickness in MOSFETs has to be considered for accurate MOSFET intrinsic capacitance modeling for circuit simulation. We report in this paper an analytical MOSFET intrinsic capacitance model incorporating the concept of charge layer thickness, which was developed based on the self-consistent solution of the Schrodinger and Poisson equations with Fermi-Dirac statistics. The results demonstrate that this model has excellent accuracy and simulation performance

Keywords

MOSFET; Poisson equation; Schrodinger equation; capacitance; semiconductor device models; Fermi-Dirac statistics; Poisson equation; Schrodinger equation; charge layer thickness; circuit simulation; finite charge layer thickness; gate oxide thickness; intrinsic capacitance; quantization-induced charge layer thickness; self-consistent solution; simulation performance; thin-oxide-MOSFET; Circuit simulation; Computational modeling; MOSFET circuits; Poisson equations; Predictive models; Quantization; Quantum capacitance; Semiconductor process modeling; Statistical analysis; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.760418

Filename

760418