The MOS depletion-mode thyristor: a new MOS-controlled bipolar power device

Author

Baliga, B.Jayant ; Chang, Hsueh-Rong

Author_Institution

Corporate Res. & Dev. Center, Gen. Electric Co., Schenectady, NY, USA

Volume

9

Issue

8

fYear

1988

Firstpage

411

Lastpage

413

Abstract

A new MOS-bipolar power device in which forced-gate turn-off is achieved using a depletion region formed by an MOS gate structure is described. This device, called the depletion-mode thyristor (DMT), offers many highly desired features for high-voltage power switching applications: a) low ON-state drop, b) high input impedance, c) three-terminal operation, d) equivalent complementary devices, and e) high maximum controllable current. Experimental verification of device operation has been achieved using a UMOS gate technology.<>

Keywords

metal-insulator-semiconductor devices; thyristors; MOS depletion-mode thyristor; MOS gate structure; MOS-controlled bipolar power device; ON-state drop; UMOS gate technology; depletion region; equivalent complementary devices; forced-gate turn-off; high input impedance; high maximum controllable current; high-voltage power switching applications; three-terminal operation; Bipolar transistors; Current density; Equivalent circuits; Impedance; Insulated gate bipolar transistors; MOSFET circuits; OFDM modulation; Power systems; Thyristors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.761

Filename

761