Hydrogenation of polysilicon thin-film transistor in a planar inductive H/sub 2//Ar discharge

Author

Yeh, Ching-Fa ; Chen, Tai-Ju ; Liu, Chung ; Gudmundsson, Jon T. ; Lieberman, Michael A.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

20

Issue

5

fYear

1999

fDate

5/1/1999 12:00:00 AM

Firstpage

223

Lastpage

225

Abstract

A planar inductive discharge is used to hydrogenate polysilicon thin-film transistors (poly-Si TFTs). Experimental results indicate that inductive discharges operate at higher plasma densities, thereby capable of shortening the hydrogenation time, in addition, to promote the ionization of hydrogen, Ar gas is also introduced to H/sub 2/ plasma during hydrogenation. Furthermore, we discuss the mechanism of Ar enhanced hydrogenation and the characteristics of H/sub 2//Ar mixed plasma. Moreover, the post-hydrogenation anneal is utilized to further enhance passivation efficiency and improve the reliability of poly-Si TFTs.

Keywords

annealing; elemental semiconductors; hydrogenation; passivation; plasma materials processing; semiconductor device reliability; silicon; thin film transistors; Si:H; annealing; hydrogenation; inductively coupled plasma; passivation; planar inductive H/sub 2//Ar discharge; polysilicon thin film transistor; reliability; Argon; Hydrogen; Plasma density; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Plasma sources; Plasma temperature; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.761021

Filename

761021