Title :
Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process
Author :
Lei, Tan Fu ; Chen, Jiann Heng ; Wang, Ming Fang ; Chao, Tien Sheng
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
5/1/1999 12:00:00 AM
Abstract :
This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combing N/sub 2/O nitridation and chemical mechanical polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Q/sub hd/ (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.
Keywords :
chemical mechanical polishing; electric breakdown; electric strength; integrated memory circuits; leakage currents; nitridation; silicon compounds; surface topography; CMP process; N/sub 2/O; SiO; charge-to-breakdown; chemical mechanical polishing; nitridation; nonvolatile memories; planar surface; polysilicon oxide integrity; Annealing; Capacitors; Chaos; Chemical processes; Contacts; Nitrogen; Oxidation; Rough surfaces; Surface morphology; Surface roughness;
Journal_Title :
Electron Device Letters, IEEE
