• DocumentCode
    1501649
  • Title

    Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process

  • Author

    Lei, Tan Fu ; Chen, Jiann Heng ; Wang, Ming Fang ; Chao, Tien Sheng

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    20
  • Issue
    5
  • fYear
    1999
  • fDate
    5/1/1999 12:00:00 AM
  • Firstpage
    235
  • Lastpage
    237
  • Abstract
    This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combing N/sub 2/O nitridation and chemical mechanical polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Q/sub hd/ (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.
  • Keywords
    chemical mechanical polishing; electric breakdown; electric strength; integrated memory circuits; leakage currents; nitridation; silicon compounds; surface topography; CMP process; N/sub 2/O; SiO; charge-to-breakdown; chemical mechanical polishing; nitridation; nonvolatile memories; planar surface; polysilicon oxide integrity; Annealing; Capacitors; Chaos; Chemical processes; Contacts; Nitrogen; Oxidation; Rough surfaces; Surface morphology; Surface roughness;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.761025
  • Filename
    761025
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1501649