Title :
A Selective-Area Metal Bonding InGaAsP–Si Laser
Author :
Hong, Tao ; Ran, Guang-Zhao ; Chen, Ting ; Pan, Jiao-Qing ; Chen, Wei-Xi ; Wang, Yang ; Cheng, Yuan-Bing ; Liang, Song ; Zhao, Ling-Juan ; Yin, Lu-Qiao ; Zhang, Jian-Hua ; Wang, Wei ; Qin, Guo-Gang
Author_Institution :
State Key Lab. for Mesoscopic Phys., Peking Univ., Beijing, China
Abstract :
A 1.55-μ m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two Si blocking stripes, each with an excess-metals accommodated space, were used to separate the optical coupling area and the metal bonding areas. In such a structure, the air gap between the InGaAsP structure and Si waveguide has been reduced to be negligible. The laser operates with a threshold current density of 1.7 kA/cm2 and a slope efficiency of 0.05 W/A under pulsed-wave operation. Room-temperature continuous lasing with a maximum output power of 0.45 mW is realized.
Keywords :
III-V semiconductors; air gaps; bonding processes; gallium arsenide; indium compounds; optical fabrication; semiconductor lasers; InGaAsP-Si; air gap; blocking stripes; optical coupling area; power 0.45 W; selective-area metal bonding; semiconductor lasers; slope efficiency; threshold current density; wavelength 1.55 mum; InGaAsP–Si laser; Si photonics; selective-area metal bonding (SAMB);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2050683
