Analytical Model of One-Dimensional Carbon-Based Schottky-Barrier Transistors

Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, which cannot be described neither by drift diffusion nor by purely ballistic models. In carbon-based nanotransistors, source and drain contacts are often characterized by the formation of Schottky barriers (SBs), with strong influence on transport. In this paper, we present a model for 1-D field-effect transistors, taking into account on equal footing both SB contacts and FFE transport regime. Intermediate transport is introduced within the Büttiker´s probe approach to dissipative transport, in which a nonballistic transistor is seen as a suitable series of individually ballistic channels. Our model permits the study of the interplay of SBs and ambipolar FFE transport and, in particular, of the transition between SB- and dissipation-limited transports.