Title :
AlGaAs/GaAs HBTs fabricated by a self-alignment technology using polyimide for electrode separation
Author :
Morizuka, Kouhei ; Asaka, Masayuki ; Iizuka, Norio ; Tsuda, Kunio ; Obara, M.
Author_Institution :
Toshiba Res. & Dev. Centre, Kawasaki, Japan
Abstract :
A self-aligned HBT (heterojunction bipolar transistor) technology using polymide for insulating the emitter contact from the base contact is described. A 1- mu m emitter-width HBT with maximum oscillation frequency of 86 GHz was successfully fabricated. This processing was also applied to fabricate frequency-divider ICs. An operating frequency of 18 GHz was obtained with good reproducibility.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; solid-state microwave devices; 1 micron; 18 GHz; 86 GHz; AlGaAs-GaAs; EHF; III-V semiconductors; SHF; emitter-width; emitter/base contacts insulation; frequency-divider ICs; heterojunction bipolar transistor; maximum oscillation frequency; microwave device; polyimide electrode separation; self-aligned HBT; self-alignment technology; Current density; Cutoff frequency; Electrodes; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Polyimides; Resists;
Journal_Title :
Electron Device Letters, IEEE
