Title :
164-GHz MMIC HEMT doubler
Author :
Radisic, Vesna ; Micovic, Miro ; Hu, Ming ; Janke, Paul ; Ngo, Catherine ; Nguyen, Loi ; Samoska, Lorene ; Morgan, Matthew
Author_Institution :
HRL Labs., Malibu, CA, USA
fDate :
6/1/2001 12:00:00 AM
Abstract :
In this paper, a MMIC frequency doubler based on an InP HEMT and grounded CPW (GCPW) technology is reported. The doubler demonstrated a conversion loss of only 2 dB and output power of 5 dBm at 164 GHz. The 3 dB output power bandwidth is 14 GHz, or 8.5%. This is the best reported result for a MMIC HEMT doubler above 100 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; coplanar waveguides; field effect MIMIC; indium compounds; millimetre wave frequency convertors; 14 GHz; 164 GHz; 2 dB; EHF; InP; InP HEMT; MM-wave doubler; MM-wave monolithic IC; MMIC HEMT doubler; MMIC frequency doubler; MODFET; conversion loss; grounded CPW technology; Coplanar waveguides; Frequency conversion; HEMTs; Indium phosphide; Laboratories; MMICs; Power generation; Propulsion; Schottky diodes; Semiconductor device modeling;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/7260.928925
