A 1.9-GHz DECT CMOS power amplifier with fully integrated multilayer LTCC passives

Author

Heo, D. ; Sutono, A. ; Chen, E. ; Suh, Y. ; Laskar, J.

Author_Institution

Packaging Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

11

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

249

Lastpage

251

Abstract

We present the first demonstration of a CMOS power amplifier (PA) utilizing fully integrated multilayer low-temperature co-fired ceramic (LTCC) high-Q passives for 1.9-GHz digital European cordless telecommunications (DECT) applications. The inductor and capacitor library were built in a multilayer LTCC board using a compact topology. An inductor Q-factor as high as 100 with a self-resonant frequency (SRF) as high as 8 GHz was demonstrated. Measured results of the CMOS-LTCC PA show good agreement with the simulated results exhibiting 48% power added efficiency, 26-dBm output power and 17-dB gain at 1.9 GHz with a 3.3-V drain supply voltage. This result is the first significant step toward a compact DECT transceiver module development utilizing fully integrated multilayer LTCC passives and a standard CMOS technology.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; cordless telephone systems; hybrid integrated circuits; modules; 1.9 GHz; 17 dB; 3.3 V; 48 percent; DECT CMOS power amplifier; LTCC board; LTCC capacitors; LTCC inductors; compact DECT transceiver module development; digital European cordless telecommunications; high-Q passive components; low-temperature co-fired ceramic; CMOS technology; Capacitors; Ceramics; High power amplifiers; Inductors; Nonhomogeneous media; Power amplifiers; Q factor; Software libraries; Topology;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/7260.928928

Filename

928928