DocumentCode :
1502262
Title :
Field-Effect Control of Electroosmotic Pumping Using Porous Silicon–Silicon Nitride Membranes
Author :
Vajandar, Saumitra K. ; Xu, Dongyan ; Sun, Jiashu ; Markov, Dmitry A. ; Hofmeister, William H. ; Li, Deyu
Author_Institution :
Interdiscipl. Grad. Program in Mater. Sci., Vanderbilt Univ., Nashville, TN, USA
Volume :
18
Issue :
6
fYear :
2009
Firstpage :
1173
Lastpage :
1183
Abstract :
Field-effect control of electroosmotic (EO) flow, which has been demonstrated on single microchannels, provides a novel method to modulate the zeta potential and, therefore, the EO flow through a porous membrane. To realize field-effect control of EO pumping with a membrane, a SiNx-coated porous silicon membrane was designed and fabricated. The heavily doped silicon core was used as a conducting electrode to apply the transverse gate potential, which modulates the zeta potential of the channel walls and, thereby, the EO flow rate with constant externally applied electric fields along the channels. We observed significant electrolytic-rectification effect, i.e., for gate voltage (Vg) < 0, a substantial current leakage through the SiNx was observed, whereas negligible leakage current was detected for Vg > 0. Significant EO flow control, nearly 70% reduction in flow velocity, was observed for positive gate bias, while only 15 % flow-velocity enhancement was observed for negative gate bias of similar magnitude. This first demonstration of field-effect control on porous membranes opens the door for making high-flow rate EO pumps with porous membranes of low zeta potential materials.
Keywords :
electrophoresis; flow control; leakage currents; micropumps; EO flow control; Si-SiN; channel walls; conducting electrode; current leakage; electrolytic-rectification effect; electroosmotic flow; electroosmotic pumping; field-effect control; flow velocity reduction; flow-velocity enhancement; porous silicon-silicon nitride membranes; single microchannels; transverse gate potential; Electroosmotic pumping; electrolytic rectification; field-effect flow control; porous silicon;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2009.2031692
Filename :
5289977
Link To Document :
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