Title :
A 55–64 GHz Fully-Integrated Sub-Harmonic Wideband Transceiver in 130 nm CMOS Process
Author_Institution :
Dept. of Appl. Electron. Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan
Abstract :
In this letter, a 55-64 GHz compact fully-integrated gigabit transceiver with sub-harmonic pump technique is presented. The transceiver consists of a single-pole-double-throw (SPDT) traveling wave switch, a low-noise amplifier (LNA), a buffer amplifier (BA), and two sub-harmonic resistive mixers for up-conversion and down-conversion, respectively. The transceiver using 130 nm standard CMOS technology achieves an up-conversion gain of 7.4 dB at 62 GHz and down-conversion gain of 7.2 dB at 60 GHz with a compact chip size of 1.2 mm2. The 3 dB frequency bandwidth ranges from 55 to 64 GHz, which can cover the whole frequency band for 802.15.TG3C WPAN applications. For system applications, gigabit BPSK modulation signal test is successfully performed in this work.
Keywords :
CMOS integrated circuits; MIMIC; transceivers; 802.15.TG3C WPAN application; CMOS process; buffer amplifier; compact fully-integrated gigabit transceiver; downconversion mixer; frequency 55 GHz to 64 GHz; fully-integrated subharmonic wideband transceiver; gain 7.2 dB; gain 7.4 dB; gigabit BPSK modulation signal test; low-noise amplifier; single-pole-double-throw traveling wave switch; size 130 nm; subharmonic pump technique; subharmonic resistive mixers; up-conversion mixer; 60 GHz; CMOS; gigabit; millimeter-wave (MMW); sub-harmonic; transceiver;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2009.2032029
