• DocumentCode
    1502467
  • Title

    A DC-21 GHz Low Imbalance Active Balun Using Darlington Cell Technique for High Speed Data Communications

  • Author

    Weng, Shou-Hsien ; Chang, Hong-Yeh ; Chiong, Chau-Ching

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
  • Volume
    19
  • Issue
    11
  • fYear
    2009
  • Firstpage
    728
  • Lastpage
    730
  • Abstract
    A DC-21 GHz low imbalance active balun using a 2 mum InGaP/GaAs HBT process is presented in this letter for high speed data communications. A Darlington cell is adopted to enhance 3 dB bandwidth of the proposed active balun. A feedback capacitor is designed to compensate the phase error between differential output ports caused by the different number of stages. The proposed active balun achieves a broad bandwidth of 21 GHz, an average small signal gain of 2.5 dB, a maximum amplitude imbalance of 1.2 dB, and a phase error of less than 5deg. The measured group delays of the balun are lower than 30 ps with low variation. Moreover, an eye diagram with a pseudorandom bit stream of up to 12.5 Gbps is presented. The active balun is appropriate for high speed data communications due to its low imbalance and group delay.
  • Keywords
    III-V semiconductors; baluns; data communication; gallium arsenide; heterojunction bipolar transistors; high-speed techniques; indium compounds; Darlington cell technique; HBT process; InGaP-GaAs; bandwidth 21 GHz; feedback capacitor; gain 2.5 dB; group delay measurement; high-speed data communication; low-imbalance active balun; size 2 mum; Active balun; MMIC; darlington cell; heterojunction bipolar transistor (HBT); microwave;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2009.2032017
  • Filename
    5290007