DocumentCode :
1502527
Title :
Visible and 1.54 
m Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering
Author :
Yerci, Selçuk ; Li, Rui ; Kucheyev, Sergei O. ; van Buuren, T. ; Basu, Soumendra N. ; Negro, Luca Dal
Author_Institution :
Dept. of Electr. & Comput. Eng., Boston Univ., Boston, MA, USA
Volume :
16
Issue :
1
fYear :
2010
Firstpage :
114
Lastpage :
123
Abstract :
In this paper, we present our main results on the structural and optical properties of light-emitting amorphous silicon nitride (SiNx) films fabricated by reactive magnetron cosputtering. In particular, we discuss the origin of the visible emission in amorphous silicon nitride films and investigate the optical emission properties of Erbium-doped amorphous silicon nitride (Er:SiNx). The mechanisms of Er excitation and de-excitation in Er:SiNx are discussed in relation to the engineering of efficient light sources at 1.54 μm for on-chip nanophotonics applications. These results suggest that Er-doped amorphous silicon nitride films have a large potential for the fabrication of optically active photonic devices based on the Si technology.
Keywords :
amorphous semiconductors; erbium; nanophotonics; optical properties; silicon compounds; SiNx:Er; erbium doped amorphous silicon nitride; light emitting amorphous silicon nitride films; on-chip nanophotonics; optical emission properties; reactive magnetron cosputtering; structural properties; visible emission; wavelength 1.54 μm; Amorphous magnetic materials; Amorphous silicon; Erbium; Light sources; Magnetic properties; Optical devices; Optical films; Semiconductor films; Silicon compounds; Stimulated emission; Amorphous semiconductors; erbium; photoluminescence; silicon alloys;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2009.2032516
Filename :
5290016
Link To Document :
