Title :
High-Linearity Uni-Traveling-Carrier Photodiodes
Author :
Pan, Huapu ; Beling, Andreas ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
The third-order intermodulation distortions of an InGaAs-InP charge-compensated uni-traveling-carrier photodiode are characterized using both two-tone and three-tone measurement techniques. Up to 720-MHz modulation frequency the third-order output intercept point (OIP3) reaches 56 ??1 dBm.
Keywords :
III-V semiconductors; indium compounds; optical modulation; photodiodes; InGaAs-InP; charge compensated unitraveling-carrier photodiode; high linearity unitraveling carrier photodiodes; third order intermodulation distortion; Indium compounds; nonlinearities; photodetectors; photodiodes;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2034126
