Title :
Barrier height enhancement of InP-based n-Ga0.47In0.53As Schottky-barrier diodes grown by molecular beam epitaxy
Author :
Kim, J.H. ; Li, S.S. ; Figueroa, L.
Author_Institution :
Jet Propulsion Lab., Pasadena, CA, USA
fDate :
5/26/1988 12:00:00 AM
Abstract :
Barrier height enhancement of an InP-based p+ n-Ga0.47In0.53As Schottky diode grown by MBE has been demonstrated for infrared photodetector applications. A barrier height of 0.35 eV for n-Ga0.47In0.53 As Schottky barrier diodes, was increased to the effective barrier height of 0.55 eV, with a p+-Ga0.47In0.53As surface layer of 30 nm thick. The results show a reverse leakage current density of 1.5×10-3 A/cm2 and a junction capacitance of 0.3 pF, which are comparable to those of p-Ga0.47In0.53As Schottky-barrier diodes at a reverse bias voltage of 5 V
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; indium compounds; infrared detectors; molecular beam epitaxial growth; optical communication equipment; photodetectors; photodiodes; 0.3 pF; 0.55 eV; Ga0.47In0.53As-InP; III-V semiconductors; IR detector; MBE; Schottky-barrier diodes; barrier height enhancement; infrared photodetector applications; junction capacitance; molecular beam epitaxy; optical communication equipment; p+ surface layer; p+n diode; reverse leakage current density;
Journal_Title :
Electronics Letters
