Title :
Charge transport and trapping characteristics in thin nitride-oxide stacked films
Author :
Young, K.K. ; Hu, Cheming ; Oldham, William G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A charge transport and trapping model for thin nitride-oxide stacked films between silicon substrates and polysilicon gates is proposed. Nitride-oxide stacked films can be thought of as an oxide film with electron trapping at the nitride/oxide interface. The density of electron trapping is determined by the current-continuity requirement. The electron trapping reduces the leakage current and helps to lower the incidence of early failures for nitride-oxide stacked films.<>
Keywords :
dielectric thin films; electron traps; electronic conduction in insulating thin films; leakage currents; metal-insulator-semiconductor structures; MOS structure; Si substrate; Si-Si/sub 3/N/sub 4/-SiO/sub 2/-Si; charge transport; current-continuity requirement; electron trapping; leakage current; poly-Si gates; thin nitride-oxide stacked films; trapping model; Conductive films; Dielectric thin films; Electron traps; Leakage current; Oxidation; Semiconductor films; Silicon; Substrates; Temperature distribution; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
