The Use of Electron-Beam Lithography for Localized Micro-Beam Irradiations

Author

Gonzalez-Velo, Y. ; Boch, J. ; Pichot, F. ; Mekki, J. ; Roche, N. J -H ; Pérez, S. ; Deneau, C. ; Vaille, J.-R. ; Dusseau, L. ; Saigné, F. ; Lorfèvre, E. ; Schrimpf, R.D.

Author_Institution

Univ. Montpellier 2, Montpellier, France

Volume

58

Issue

3

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

1104

Lastpage

1111

Abstract

A controlled microbeam facility based on electron-beam lithography is demonstrated as a means of observing total dose induced compensation effects on circuit parameters and understanding degradation mechanisms. The system uses electron-beam lithography techniques to perform on-chip microbeam irradiations on individual transistors or sub-circuits without any irradiation of the neighboring transistors. An experimental validation of the mechanisms proposed to explain the sensitivity of the input current of the LM139 as an illustration of this technique is provided.

Keywords

electron beam lithography; radiation hardening (electronics); electron-beam lithography; localized micro-beam irradiations; total dose induced compensation effects; Calibration; Electron beams; Lithography; Performance evaluation; Radiation effects; Scanning electron microscopy; Transistors; Bipolar microcircuit; circuit-effect; compensation; dose; electron-beam lithography; localized irradiation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2128885

Filename

5755135