Effect of DC Bias Field on the Time-of-Flight Current Waveforms of CdTe and CdZnTe Detectors

Author

Suzuki, Kazuhiko ; Sawada, Takayuki ; Imai, Kazuaki

Author_Institution

Hokkaido Inst. of Technol., Sapporo, Japan

Volume

58

Issue

4

fYear

2011

Firstpage

1958

Lastpage

1963

Abstract

The effect of a DC bias field on the time-of-flight current waveforms of electron and hole drift in CdTe and CdZnTe is reported. Under a DC bias, the electron waveforms show more rapid decay than under a pulsed bias, whereas the hole waveforms evolve with time. Qualitatively similar behavior is observed in both CdTe and CdZnTe. Monte Carlo simulations of the current waveforms indicate that these results can be interpreted as quadratic band bending due to the emergence of a homogeneously distributed positive space charge with a concentration of 10¹⁰ to 10¹¹ cm^-3.

Keywords

Monte Carlo methods; electron mobility; hole mobility; semiconductor counters; CdTe detector; CdZnTe detector; DC bias field; Monte Carlo simulation; electron waveforms; hole waveforms; positive space charge; quadratic band bending; time-of-flight current waveforms; Charge carrier processes; Current measurement; Electrodes; Measurement by laser beam; Pulse measurements; Simulation; Temperature measurement; CdTe; CdZnTe; Monte Carlo simulation of time-of-flight current; internal ilectric field distribution;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2138719

Filename

5755136