Title :
Unique extraction of substrate parameters of common-source MOSFETs
Author :
Kim, Chung-Hwan ; Kim, Cheon Soo ; Yu, Hyun Kyu ; Nam, Kee Soo
Author_Institution :
Micro Electron. Technol. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea
fDate :
3/1/1999 12:00:00 AM
Abstract :
The unique extraction method of small-signal substrate parameters for MOSFETs is proposed. To cover the output resistance reduction at microwave frequency range, drain substrate resistance as well as drain junction capacitance is considered. Parasitic series resistances are extracted at the zero-gate-bias cold-FET condition using the asymptotic behavior of Z-parameters. The modeled S-parameters fit the measured ones well without any optimization after parameter extraction
Keywords :
MOSFET; S-parameters; capacitance; electric resistance; equivalent circuits; microwave field effect transistors; semiconductor device models; Z-parameters; asymptotic behavior; common-source MOSFET; drain junction capacitance; drain substrate resistance; field effect transistors; microwave frequency range; modeled S-parameters; output resistance reduction; parasitic series resistances extraction; small-signal substrate parameters; substrate parameters extraction; zero-gate-bias cold-FET condition; CMOS process; Electrical resistance measurement; Equivalent circuits; MOSFET circuits; Microwave frequencies; Microwave transistors; Parameter extraction; Parasitic capacitance; Radio frequency; Semiconductor device modeling;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
