A 1.24-GHz monolithic CMOS VCO with phase noise of -137 dBc/Hz at a 3-MHz offset

Author

Hung, C.-M. ; O, K.K.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

Volume

9

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

111

Lastpage

113

Abstract

For the first time, a 1.24-GHz CMOS voltage-controlled oscillator (VCO) with an integrated resonator which satisfies the Global System for Mobile communications (GSM) phase noise requirement at a 3-MHz offset is presented. The measured phase noise is -88, -125, and -137 dBc/Hz at 10-kHz, 600-kHz, and 3-MHz offsets, respectively. The VCO is implemented in a low-cost 0.8-μm foundry CMOS process exclusively using pMOS transistors which have greater than one order of magnitude lower 1/f noise than that of nMOS transistors. The tuning range is /spl sim/130 MHz for the control voltages between 0.5 and 3.0 V. The VCO core runs on 22 mA from a 3-V power supply.

Keywords

1/f noise; CMOS analogue integrated circuits; UHF integrated circuits; UHF oscillators; cellular radio; circuit tuning; integrated circuit design; integrated circuit noise; phase noise; radio equipment; voltage-controlled oscillators; 0.5 to 3 V; 0.8 micron; 1.24 GHz; 1/f noise; 22 mA; CMOS voltage-controlled oscillator; GSM phase noise requirement; VCO phase noise; integrated resonator; low-cost foundry CMOS process; monolithic CMOS VCO; pMOS transistors; tuning range; CMOS process; Foundries; GSM; MOSFETs; Noise measurement; Phase measurement; Phase noise; Tuning; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.761677

Filename

761677