Tunneling-injection quantum-dot laser: ultrahigh temperature stability

We propose a genuinely temperature-insensitive quantum dot (QD) laser. Our approach is based on direct injection of carriers into the QDs, resulting in a strong depletion of minority carriers in the regions outside the QDs. Recombination in these regions, which is the dominant source of the temperature dependence, is thereby suppressed, raising the characteristic temperature T₀ above 1500 K. Still further enhancement of T₀ results from the resonant nature of tunneling injection, which reduces the inhomogeneous line broadening by selectively cutting off the nonlasing QDs