Title :
Design of the active structure of high-performance 1.55-μm In 1-x-yGayAlxAs strained MQW lasers
Author :
Zhang, Yejin ; Chen, Weiyou ; Wang, Aijun ; Jiang, Heng ; Liu, Caixia ; Liu, Shiyong
Author_Institution :
State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
Abstract :
We have used Harrison´s model and the anisotropic parabolic approximation to calculate the band structure of In1-x-yGa yAlxAs compressively strained quantum wells (QWs). To design 1.55 μm wavelength lasers, the relations between the well width, gain, and composition are presented. The well number and the cavity length are optimized to obtain a low threshold and high maximum operating temperature (550-560 K) QW laser. Several empirical formulas are presented for further applications
Keywords :
III-V semiconductors; aluminium compounds; band structure; gallium arsenide; indium compounds; laser cavity resonators; laser theory; optical design techniques; quantum well lasers; 1.55 mum; 550 to 560 K; Harrison model; In1-x-yGayAlxAs compressively strained quantum wells; InGaAlAs; active structure design; anisotropic parabolic approximation; band structure; cavity length; composition; empirical formulas; gain; high maximum operating temperature; high-performance 1.55-μm In1-x-yGayAl xAs strained MQW lasers; low threshold; well number; well width; Anisotropic magnetoresistance; Composite materials; Laser modes; Optical design; Optical materials; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
