• DocumentCode
    1502954
  • Title

    High-Power, Low-Noise 1.5-μm Slab-Coupled Optical Waveguide (SCOW) Emitters: Physics, Devices, and Applications

  • Author

    Juodawlkis, Paul W. ; Plant, Jason J. ; Loh, William ; Missaggia, Leo J. ; O´Donnell, Frederick J. ; Oakley, Douglas C. ; Napoleone, Antonio ; Klamkin, Jonathan ; Gopinath, Juliet T. ; Ripin, Daniel J. ; Gee, Sangyoun ; Delfyett, Peter J. ; Donnelly, Jose

  • Author_Institution
    Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA
  • Volume
    17
  • Issue
    6
  • fYear
    2011
  • Firstpage
    1698
  • Lastpage
    1714
  • Abstract
    We review the development of a new class of high-power, edge-emitting, semiconductor optical gain medium based on the slab-coupled optical waveguide (SCOW) concept. We restrict the scope to InP-based devices incorporating either InGaAsP or InGaAlAs quantum-well active regions and operating in the 1.5-μm-wavelength region. Key properties of the SCOW gain medium include large transverse optical mode dimensions (>;5 × 5 μm), ultralow optical confinement factor (Γ ~ 0.25-1%), and small internal loss coefficient (αi ~ 0.5 cm-1). These properties have enabled the realization of 1) packaged Watt-class semiconductor optical amplifiers (SOAs) having low-noise figure (4-5 dB), 2) monolithic passively mode-locked lasers generating 0.25-W average output power, 3) external-cavity fiber-ring actively mode-locked lasers exhibiting residual timing jitter of <;10 fs (1Hz to Nyquist), and 4) single-frequency external-cavity lasers producing 0.37-W output power with Gaussian (Lorentzian) linewidth of 35 kHz (1.75 kHz) and relative intensity noise (RIN) <; -160 dB/Hz from 200 kHz to 10 GHz. We provide an overview the SCOW design principles, describe simulation results that quantify the performance limitations due to confinement factor, linear optical loss mechanisms, and nonlinear two-photon absorption (TPA) loss, and review the SCOW devices that have been demonstrated and applications that these devices are expected to enable.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser mode locking; laser noise; nonlinear optics; optical losses; photoexcitation; quantum well lasers; ring lasers; semiconductor optical amplifiers; timing jitter; two-photon processes; waveguide lasers; Gaussian linewidth; InGaAsP-InGaAlAs; Lorentzian linewidth; SOA; external-cavity fiber-ring actively mode-locked lasers; frequency 200 kHz to 10 GHz; high-power edge-emitting semiconductor optical gain medium; high-power low-noise slab-coupled optical waveguide emitters; internal loss coefficient; laser output power; linear optical loss; monolithic passively mode-locked lasers; nonlinear two-photon absorption; packaged watt-class semiconductor optical amplifiers; power 0.25 W; power 0.37 W; quantum well; relative intensity noise; residual timing jitter; single-frequency external-cavity lasers; transverse optical mode; ultralow optical confinement factor; wavelength 1.5 mum; Laser mode locking; Optical losses; Optical saturation; Optical waveguides; Power amplifiers; Quantum well devices; Semiconductor optical amplifiers; External-cavity lasers; mode-locked lasers; noise figure; optical waveguides; power amplifiers; quantum-well devices; semiconductor optical amplifiers; single-frequency lasers;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2011.2126041
  • Filename
    5755167