Title :
Performance characteristics of buried heterostructure VCSELs using semi-insulating GaInP:Fe regrowth
Author :
Carlsson, Christina ; Barrios, C.A. ; Messmer, E.R. ; Lövqvist, Anita ; Halonen, John ; Vukusic, Josip ; Ghisoni, Marco ; Lourdudoss, Sebastian ; Larsson, Anders
Author_Institution :
Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
We have fabricated GaAs-AlGaAs buried heterostructure vertical cavity surface emitting lasers, emitting at 850 mm, using semi-insulating GaInP:Fe regrowth and investigated their static properties. Lasers of different size (10-21 μm) have threshold currents in the range 2.8-7.0 mA, and produce a maximum output power of 1.7-6.0 mW at room temperature. The variation of threshold current with device size shows that the leakage current at the regrowth interface accounts for a significant part of the injection current. In spite of this, a differential quantum efficiency in the range 20%-30% is obtained which indicates that the regrowth interface is smooth and does not introduce any significant scattering loss. Studies of the transverse mode properties suggest that the GaInP provides weak guiding, resulting in single mode operation up to an output power of 0.7 mW and a beam divergence of only 60 for lasers as large as 10 μm
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; leakage currents; optical fabrication; semiconductor growth; semiconductor lasers; surface emitting lasers; vapour phase epitaxial growth; 0.7 mW; 1.7 to 6.0 mW; 10 mum; 10 to 21 mum; 2.8 to 7.0 mA; 293 to 298 K; 850 nm; GaAs-AlGaAs; GaAs-AlGaAs buried heterostructure vertical cavity surface emitting lasers; GaInP:Fe; beam divergence; buried heterostructure VCSEL; device size; differential quantum efficiency; fabrication; injection current; leakage current; maximum output power; output power; performance characteristics; regrowth interface; room temperature; scattering loss; semi-insulating GaInP:Fe regrowth; single mode operation; static properties; threshold currents; transverse mode properties; weak guiding; Laser beams; Laser modes; Leakage current; Particle scattering; Power generation; Power lasers; Surface emitting lasers; Temperature distribution; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
