Title :
Research on Electrical Efficiency Degradation Influenced by Current Crowding in Vertical Blue InGaN-on-SiC Light-Emitting Diodes
Author :
Malyutenko, Volodymyr K. ; Bolgov, Sergey S. ; Tykhonov, Andrey N.
Author_Institution :
Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine
fDate :
7/1/2012 12:00:00 AM
Abstract :
Current-induced electrical efficiency degradation (EED) is identified as a strong power conversion efficiency-limiting factor for vertical blue InGaN-on-SiC light-emitting diodes (LEDs). It is found that EED is caused by an increase in series resistance that follows current crowding. EED starts at the moderate-current domain ( ≥ 10-3 A) and limits the power conversion efficiency at the level of ≤ 75% in the high-current domain (>;1.0 A). By decreasing current spreading length, EED also causes the optical efficiency to degrade and stands for an important aspect of the vertical LED´s performance.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; silicon compounds; wide band gap semiconductors; InGaN-SiC; current crowding; current spreading length; electrical efficiency degradation; power conversion efficiency limiting factor; series resistance; vertical blue light emitting diodes; Degradation; Junctions; Light emitting diodes; Optical losses; Proximity effects; Resistance; Stimulated emission; Current crowding; InGaN-on-SiC structures; light emitting devices; power conversion efficiency;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2196426
