Title :
Insulated signal transmission system using planar resonant coupling technology for high voltage IGBT gate driver
Author :
Shinoda, Hiroyuki ; Terada, Tsubasa
Author_Institution :
Inf. Electron. Res. Dept., Hitachi, Ltd., Kokubunji, Japan
Abstract :
An insulated signal transmission system using planar resonant coupling technology has been developed for providing driving signal transmission to control power electronic equipment. The resonant coupling can reduce the unwanted leakage that prevents conventional wireless systems from being applied inside the equipment. Using planar resonant couplers, the system restricted propagation loss to -0.9 dB and return loss to -10.0 dB in a wide frequency range of 2.2-2.78 GHz. Additionally, the couplers showed highly reliable parasitic capacitance characteristics and partial discharge characteristics. The developed system demonstrated switching operation of 3.3 kV-1200 A insulated-gate bipolar transistors (IGBTs) without disturbances between the highpower switching IGBTs and the RF transceivers.
Keywords :
coupled circuits; driver circuits; insulated gate bipolar transistors; partial discharges; resonators; RF transceiver; current 1200 A; frequency 2.2 GHz to 2.78 GHz; high voltage IGBT gate driver; high-power switching IGBT; insulated signal transmission system; insulated-gate bipolar transistor; loss -0.9 dB; loss -10.0 dB; parasitic capacitance characteristics; partial discharge characteristics; planar resonant coupling technology; power electronic equipment control; system restricted propagation loss; voltage 3.3 kV; wireless system; Couplers; Couplings; Insulated gate bipolar transistors; Logic gates; Propagation losses; Radio frequency; Transceivers;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
Conference_Location :
Pittsburgh, PA
DOI :
10.1109/ECCE.2014.6953403