A Unified Carrier-Transport Model for the Nanoscale Surrounding-Gate MOSFET Comprising Quantum–Mechanical Effects

Author

Hu, Guangxi ; Gu, Jinglun ; Hu, Shuyan ; Ding, Ying ; Liu, Ran ; Tang, Ting-ao

Author_Institution

State Key Lab. of Applic.-Specific Integrated Circuits & Syst., Fudan Univ., Shanghai, China

Volume

58

Issue

7

fYear

2011

fDate

7/1/2011 12:00:00 AM

Firstpage

1830

Lastpage

1836

Abstract

A unified carrier-transport model for a nanoscale surrounding-gate metal-oxide-semiconductor field-effect transistor (SG MOSFET) is developed. The model is based on McKelvey´s flux theory and includes quantum-mechanical effects. The model is applicable for both ballistic- and diffusive-transport regimes. The model results fit with the simulation results extremely well in both transport regimes for the small drain biases VDS <; 1 V. With the model, the characteristics of a drain-to-source current of an SG MOSFET working in the linear region can be very quickly and easily obtained. The model will provide some guidance for the practical use of SG nanowire transistors.

Keywords

MOSFET; nanowires; ballistic-transport; diffusive-transport; drain-to-source current; nanoscale SG MOSFET; nanoscale surrounding-gate MOSFET; nanowire transistors; quantum-mechanical effects; unified carrier-transport model; Backscatter; Logic gates; MOSFET circuits; Silicon; Simulation; Solid modeling; Transistors; Device simulation; nanowire; semiconductor device modeling; surrounding-gate metal–oxide–semiconductor field-effect transistors (SG MOSFETs);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2136343

Filename

5755186