Title :
Process Technology Variation
Author :
Kuhn, Kelin J. ; Giles, Martin D. ; Becher, David ; Kolar, Pramod ; Kornfeld, Avner ; Kotlyar, Roza ; Ma, Sean T. ; Maheshwari, Atul ; Mudanai, Sivakumar
Author_Institution :
Components Res. Group, Intel Corp., Hillsboro, OR, USA
Abstract :
Moore´s law technology scaling has improved performance by five orders of magnitude in the last four decades. As advanced technologies continue the pursuit of Moore´s law, a variety of challenges will need to be overcome. One of these challenges is the management of process variation. This paper discusses the importance of process variation in modern transistor technology, reviews front-end variation sources, presents device and circuit variation measurement techniques, including circuit and memory data from the 32-nm node, and compares recent intrinsic transistor variation performance from the literature.
Keywords :
CMOS memory circuits; SRAM chips; Moore law technology; circuit data; circuit variation measurement technique; front end variation source; intrinsic transistor variation performance; memory data; modern transistor technology; process variation management; size 32 nm; Arrays; Random access memory; Ring oscillators; Systematics; Transistors; $V_{rm ccmin}$; Complementary metal–oxide–semiconductor (CMOS); static random access memory (SRAM); variation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2121913
