Title :
Analysis of Crosstalk in Single- and Multiwall Carbon Nanotube Interconnects and Its Impact on Gate Oxide Reliability
Author :
Das, Debaprasad ; Rahaman, Hafizur
Author_Institution :
Dept. of Electron. & Commun. Eng., Meghnad Saha Inst. of Technol., Kolkata, India
Abstract :
This paper analyses the crosstalk effects in carbon nanotube (CNT) interconnect, and its impact on the gate oxide reliability. Using the existing models of CNT, circuit parameters for the single-wall CNT-bundle and multiwall CNT interconnects are calculated and the equivalent circuit has been developed to perform the crosstalk analysis. The crosstalk-induced overshoot/undershoots have been estimated and the impact of the overshoot/undershoots on the gate oxide reliability in terms of failure-in-time rate is calculated. A similar analysis is performed for Cu-based interconnects and comparisons are made with the results obtained for CNT-based interconnect. It has been found that the CNT-based interconnect is more suitable in VLSI circuits as far as the gate oxide reliability is concerned.
Keywords :
VLSI; carbon nanotubes; crosstalk; equivalent circuits; integrated circuit interconnections; integrated circuit reliability; monolithic integrated circuits; nanotube devices; semiconductor device reliability; semiconductor nanotubes; C; VLSI circuits; circuit parameters; crosstalk effects; crosstalk-induced overshoot; crosstalk-induced undershoots; equivalent circuit; failure-in-time rate; gate oxide reliability; multiwalled carbon nanotube interconnects; single-walled carbon nanotube interconnects; Crosstalk; Inductance; Integrated circuit interconnections; Integrated circuit modeling; Logic gates; Quantum capacitance; Average failure rate (AFR); carbon nanotube (CNT); crosstalk; failure-in-time (FIT); gate oxide reliability; multiwall CNT (MWCNT); single-wall CNT (SWCNT);
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2011.2146271