DocumentCode :
1503387
Title :
Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources
Author :
Zhang, Zhen ; Pagette, F. ; D´Emic, C. ; Yang, B. ; Lavoie, C. ; Zhu, Y. ; Hopstaken, M. ; Maurer, S. ; Murray, C. ; Guillorn, M. ; Klaus, D. ; Bucchignano, J. ; Bruley, J. ; Ott, J. ; Pyzyna, A. ; Newbury, J. ; Song, W. ; Chhabra, V. ; Zuo, G. ; Lee, K.-
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
31
Issue :
7
fYear :
2010
fDate :
7/1/2010 12:00:00 AM
Firstpage :
731
Lastpage :
733
Abstract :
An extremely low contact resistivity of 6-7 × 10-9 Ω·cm2 between Ni0.9Pt0.1Si and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in IV characteristics.
Keywords :
Schottky barriers; contact resistance; diffusion barriers; Ni0.9Pt0.1Si; Schottky barrier engineering; contact resistivities; diffusion sources; dopant segregation; sharp reduction; silicides; Contact resistivity; NiPtSi; Schottky barrier lowering; dopant segregation;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2048992
Filename :
5473039
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1503387
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