InGaN-Based High-Power Flip-Chip LEDs With Deep-Hole-Patterned Sapphire Substrate by Laser Direct Beam Drilling

Author

Lee, Jae-Hoon ; Hwang, Seok-Min ; Kim, Nam-Seung ; Lee, Jung-Hee

Author_Institution

Manuf. Technol. Group, Samsung LED Co., Ltd., Suwon, South Korea

Volume

31

Issue

7

fYear

2010

fDate

7/1/2010 12:00:00 AM

Firstpage

698

Lastpage

700

Abstract

A high-performance flip-chip light-emitting diode (LED) with deep-hole-patterned sapphire substrate was fabricated by laser direct beam drilling. The output power of the LED was measured to be as high as 145 mW at a forward current of 350 mA, which is improved by 19% compared to that of the reference LED. This significant enhancement of the LED with deep-hole-patterned sapphire is attributed to the increase of extraction efficiency, resulting from the increase in photon escape probability due to enhanced light scattering at the deep-hole pattern.

Keywords

III-V semiconductors; drilling; flip-chip devices; indium compounds; laser beam machining; laser materials processing; light emitting diodes; sapphire; substrates; InGaN; current 350 mA; deep-hole-patterned sapphire substrate; enhanced light scattering; extraction efficiency; flip-chip light-emitting diode; forward current; high-power flip-chip LED; laser direct beam drilling; output power; photon escape probability; Deep-hole pattern; InGaN; flip-chip (FC); laser beam; light-emitting diode (LED); patterned sapphire;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2048887

Filename

5473040