Title :
Scalable RF MIS varactor model
Author :
Su, C.Y. ; Tseng, B.M. ; Chang, S.J. ; Chen, L.P.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/7/2001 12:00:00 AM
Abstract :
A scalable varactor model based on the equations in the BSIM3v3 model (Berkeley short-channel IGFET model) is presented to model the behaviour of a silicon,based metal-insulator-semiconductor (MIS) varactor with different device geometries and bias conditions at different operation frequencies. The root mean square (RMS) errors of the S-parameters between the measured and simulated data are less than 3%. The scalable model provides satisfactory performance prediction for realising silicon radio frequency integrated circuits (RFICs)
Keywords :
MIS devices; S-parameters; digital simulation; semiconductor device models; varactors; BSIM3v3 model; Berkeley short-channel IGFET model; MIS varactor; S-parameters; Si; bias conditions; device geometries; operation frequencies; performance prediction; radio frequency integrated circuits; root mean square; scalable varactor model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010510
