Title :
InP 2D photonic crystal microlasers on silicon wafer: room temperature operation at 1.55 μm
Author :
Monat, C. ; Seassal, C. ; Letartre, X. ; Viktorovitch, P. ; Regreny, P. ; Gendry, M. ; Rojo-Romeo, P. ; Hollinger, G. ; Jalaguier, E. ; Pocas, S. ; Aspar, B.
Author_Institution :
Lab. d´´Electron., Optoelectron. et Microsystemes, Ecole Centrale de Lyon, Ecully, France
fDate :
6/7/2001 12:00:00 AM
Abstract :
Room temperature pulsed laser operation of 2D photonic crystal microcavities around 1.55 μm is reported. Such devices are based on thin III/V heterostructures transferred onto silicon and include an InGaAs/InP multiquantum well (MQW) active layer
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; microcavity lasers; quantum well lasers; 1.55 micrometre; 2D photonic crystal microlasers; III/V heterostructures; InGaAs-InP; InGaAs/InP; Si; microcavities; multiquantum well active layer; pulsed laser operation; room temperature operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010543
