Title :
Picosecond surface-emitting semiconductor laser with >200 mW average power
Author :
Häring, R. ; Paschotta, R. ; Gini, E. ; Morier-Genoud, F. ; Martin, D. ; Melchior, H. ; Keller, U.
Author_Institution :
Inst. of Quantum Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland
fDate :
6/7/2001 12:00:00 AM
Abstract :
A passively modelocked diode-pumped surface-emitting semiconductor laser at 950 nm with a 2 GHz repetition rate is reported. Compared to the first device of this kind, which the authors recently reported, a greatly improved average output power of 213 mW and a reduced pulse duration of 3.2 ps are achieved. The device consists of an optically pumped semiconductor gain structure and a semiconductor saturable absorber mirror (SESAM) in an external cavity
Keywords :
laser cavity resonators; laser mirrors; laser mode locking; semiconductor lasers; surface emitting lasers; 2 GHz; 213 mW; 3.2 ps; 950 nm; SESAM; average output power; external cavity; optically pumped semiconductor gain structure; passively modelocked diode-pumped surface-emitting laser; picosecond surface-emitting semiconductor laser; reduced pulse duration; repetition rate; semiconductor saturable absorber mirror;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010546
