DocumentCode
1503651
Title
High-sensitivity 1 Gbit/s CMOS receiver integrated with GaAs- or InGaAs-photodiode by wafer-bonding
Author
Nakahara, T. ; Tsuda, H. ; Ishihara, N. ; Tateno, K. ; Amano, C.
Author_Institution
NTT Photonics Labs., Kanagawa, Japan
Volume
37
Issue
12
fYear
2001
fDate
6/7/2001 12:00:00 AM
Firstpage
781
Lastpage
783
Abstract
1 Gbit/s III-V/CMOS hybrid receivers consisting of a GaAs- or InGaAs-photodiode and a 0.5 μm CMOS receiver circuit have been realised by wafer-bonding. The circuit is simple and compact with high sensitivity and broad bandwidth due to the direct attachment of III-V PDs and the absence of any parasitic capacitance. Sensitivities of -27.4 and -28.0 dBm at 1 Gbit/s are demonstrated for 0.85 and 1.55 μm receivers, respectively
Keywords
CMOS integrated circuits; III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; photodiodes; sensitivity; wafer bonding; 0.5 micron; 0.85 micrometre; 1 Gbit/s; 1.55 micrometre; GaAs; III-V/CMOS hybrid receivers; InGaAs; bandwidth; photodiode; photoreceivers; sensitivity; wafer-bonding;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010506
Filename
929694
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