Title :
High-sensitivity 1 Gbit/s CMOS receiver integrated with GaAs- or InGaAs-photodiode by wafer-bonding
Author :
Nakahara, T. ; Tsuda, H. ; Ishihara, N. ; Tateno, K. ; Amano, C.
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
fDate :
6/7/2001 12:00:00 AM
Abstract :
1 Gbit/s III-V/CMOS hybrid receivers consisting of a GaAs- or InGaAs-photodiode and a 0.5 μm CMOS receiver circuit have been realised by wafer-bonding. The circuit is simple and compact with high sensitivity and broad bandwidth due to the direct attachment of III-V PDs and the absence of any parasitic capacitance. Sensitivities of -27.4 and -28.0 dBm at 1 Gbit/s are demonstrated for 0.85 and 1.55 μm receivers, respectively
Keywords :
CMOS integrated circuits; III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; photodiodes; sensitivity; wafer bonding; 0.5 micron; 0.85 micrometre; 1 Gbit/s; 1.55 micrometre; GaAs; III-V/CMOS hybrid receivers; InGaAs; bandwidth; photodiode; photoreceivers; sensitivity; wafer-bonding;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010506
