• DocumentCode
    1503667
  • Title

    Analysis and design of power-controllable CMOS class E RF-tuned power amplifiers

  • Author

    Tu, Steve Hung-Lung

  • Author_Institution
    Dept. of Electr. Eng., Fu Jen Catholic Univ., Taipei, Taiwan
  • Volume
    5
  • Issue
    4
  • fYear
    2012
  • fDate
    4/1/2012 12:00:00 AM
  • Firstpage
    428
  • Lastpage
    434
  • Abstract
    Conventional approaches for output-power control of class E-tuned power amplifiers are investigated, which reveals a common drawback of presently popular power-control mechanisms. A novel low-distortion, output-power-control prototype architecture based on high-Q compensated varactors is therefore presented in this study. The architecture also allows the employment of high-Q bond-wire inductors with inductance variations to ensure minimum power loss.
  • Keywords
    CMOS analogue integrated circuits; inductors; power amplifiers; power control; radiofrequency amplifiers; varactors; high-Q bond-wire inductors; high-Q compensated varactors; inductance variations; low distortion output-power-control prototype architecture mechanism; minimum power loss; power-controllable CMOS class E RF-tuned power amplifier design;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IET
  • Publisher
    iet
  • ISSN
    1755-4535
  • Type

    jour

  • DOI
    10.1049/iet-pel.2011.0209
  • Filename
    6189849