DocumentCode :
1503667
Title :
Analysis and design of power-controllable CMOS class E RF-tuned power amplifiers
Author :
Tu, Steve Hung-Lung
Author_Institution :
Dept. of Electr. Eng., Fu Jen Catholic Univ., Taipei, Taiwan
Volume :
5
Issue :
4
fYear :
2012
fDate :
4/1/2012 12:00:00 AM
Firstpage :
428
Lastpage :
434
Abstract :
Conventional approaches for output-power control of class E-tuned power amplifiers are investigated, which reveals a common drawback of presently popular power-control mechanisms. A novel low-distortion, output-power-control prototype architecture based on high-Q compensated varactors is therefore presented in this study. The architecture also allows the employment of high-Q bond-wire inductors with inductance variations to ensure minimum power loss.
Keywords :
CMOS analogue integrated circuits; inductors; power amplifiers; power control; radiofrequency amplifiers; varactors; high-Q bond-wire inductors; high-Q compensated varactors; inductance variations; low distortion output-power-control prototype architecture mechanism; minimum power loss; power-controllable CMOS class E RF-tuned power amplifier design;
fLanguage :
English
Journal_Title :
Power Electronics, IET
Publisher :
iet
ISSN :
1755-4535
Type :
jour
DOI :
10.1049/iet-pel.2011.0209
Filename :
6189849
Link To Document :
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