DocumentCode
1503667
Title
Analysis and design of power-controllable CMOS class E RF-tuned power amplifiers
Author
Tu, Steve Hung-Lung
Author_Institution
Dept. of Electr. Eng., Fu Jen Catholic Univ., Taipei, Taiwan
Volume
5
Issue
4
fYear
2012
fDate
4/1/2012 12:00:00 AM
Firstpage
428
Lastpage
434
Abstract
Conventional approaches for output-power control of class E-tuned power amplifiers are investigated, which reveals a common drawback of presently popular power-control mechanisms. A novel low-distortion, output-power-control prototype architecture based on high-Q compensated varactors is therefore presented in this study. The architecture also allows the employment of high-Q bond-wire inductors with inductance variations to ensure minimum power loss.
Keywords
CMOS analogue integrated circuits; inductors; power amplifiers; power control; radiofrequency amplifiers; varactors; high-Q bond-wire inductors; high-Q compensated varactors; inductance variations; low distortion output-power-control prototype architecture mechanism; minimum power loss; power-controllable CMOS class E RF-tuned power amplifier design;
fLanguage
English
Journal_Title
Power Electronics, IET
Publisher
iet
ISSN
1755-4535
Type
jour
DOI
10.1049/iet-pel.2011.0209
Filename
6189849
Link To Document