Title :
High power X-band (8.4 GHz) SiGe/Si heterojunction bipolar transistor
Author :
Ma, Z. ; Mohammadi, S. ; Bhattacharya, P. ; Katehi, L.P.B. ; Alterovitz, S.A. ; Ponchak, G.E.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
6/7/2001 12:00:00 AM
Abstract :
A high-performance double-mesa type Si/SiGe/Si power HBT at X-band (8.4 GHz) frequency is demonstrated. Under continuous wave operation, a single 20-finger common-base Si/Si0.75Ge0.25/Si (2×10 μm2 of each emitter finger) HBT has an output power of 27.4 dBm and an associated power gain of 7 dB at peak PAE of 32.3%. These parametric values represent the state-of-the-art power performance of SiGe-based HBTs
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; silicon; wide band gap semiconductors; 32.3 percent; 7 dB; 8.4 GHz; Si-SiGe-Si; SiGe/Si heterojunction bipolar transistor; X-band; continuous wave operation; double mesa Si/SiGe/Si power HBT; output power; power added efficiency; power gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010514
