Title :
Optical tuning of monolithic In0.53Ga0.47As/In0.52Al0.48As/InP modulation-doped field-effect transistor oscillators at X and R band
Author :
Lai, Richard ; Bhattacharya, P.K. ; Brock, T.
Author_Institution :
Dept. of Elect. Eng. & Comput. Sci., Michigan Univ., Ann Arbor., MI, USA
fDate :
6/6/1991 12:00:00 AM
Abstract :
The authors have experimentally studied the optical control and optical tuning characteristics of monolithically integrated In0.53Ga0.47As/In0.52Al0.48As modulation-doped field-effect transistor (MODFET) oscillators operating in the X and R bands. For a 20 mu W intrinsic photoexcitation on the device, the maximum frequency shift for the X- and R-band oscillators was 8.7 and 11.7 MHz, respectively.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; high electron mobility transistors; indium compounds; microwave oscillators; tuning; variable-frequency oscillators; In 0.53Ga 0.47As-In 0.52Al 0.48As-InP; MODFET; R-band; VFO; X-band; field-effect transistor; intrinsic photoexcitation; modulation-doped; monolithically integrated; optical control; optical tuning characteristics; oscillators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910656
