Title :
Single quantum well strained InGaAs/GaAs lasers with large modulation bandwidth and lower damping
Author :
Nagarajan, R. ; Fukushima, T. ; Bowers, J.E. ; Geels, R.S. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
6/6/1991 12:00:00 AM
Abstract :
Strained In0.2Ga0.8As/GaAs single quantum well polyimide buried ridge waveguide lasers with 3 dB modulation bandwidths of 15 GHz and gain compression factors in as small as 9.98*10-18cm-3 have been fabricated. The authors have also observed that the gain compression factor is not larger than in lasers with bulk active areas, and is lower for structures with a smaller number of wells and shorter cavity lengths.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical waveguides; semiconductor junction lasers; 15 GHz; In 0.2Ga 0.8As-GaAs; RWG; SQW; cavity lengths; gain compression factor; large modulation bandwidth; lower damping; polyimide buried ridge waveguide; semiconductor lasers; single quantum well; strained layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910657
