Low-Voltage High-Stability Indium–Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum

Author

Lan, Linfeng ; Zhao, Mingjie ; Xiong, Nana ; Xiao, Peng ; Shi, Wen ; Xu, Miao ; Peng, Junbiao

Author_Institution

State Key Lab. of Luminescent Mater. & Devices, South China Univ. of Technol., Guangzhou, China

Volume

33

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

827

Lastpage

829

Abstract

Neodymium-doped aluminum (Al-Nd) was used as a gate electrode and was anodized, forming a layer of Nd:Al₂O₃ as the dielectric for indium-zinc oxide (IZO) thin-film transistors (TFTs). The Nd:Al₂O₃ showed high capacitance (110 nF/cm²), high breakdown field (>;6 MV/cm), and low leakage current (<; 10^-7 A/cm² at 2.0 MV/cm) without hillocks when annealed at 300°C. The TFT showed a low operating voltage of 3 V, a low off current of ~10^-13 A, a high mobility of 13.7 cm² · V^-1 · s^-1, and excellent electrical stability because of the good interface coupling between Nd:Al₂O₃ and IZO, resulting from the low electronegativities of Al and Nd.

Keywords

II-VI semiconductors; MOSFET; aluminium compounds; annealing; anodised layers; capacitance; carrier mobility; dielectric thin films; electrodes; electronegativity; indium compounds; leakage currents; low-power electronics; neodymium; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds; IZO; InZnO-Nd:Al₂O₃; TFT; anodized neodymium-doped aluminum; capacitance; electrical stability; electronegativities; gate electrode; high breakdown field; high mobility; leakage current; low-voltage high-stability indium-zinc oxide thin-film transistor; temperature 300 degC; voltage 3 V; Aluminum oxide; Dielectrics; Leakage current; Logic gates; Stress; Thin film transistors; Al; Nd; anodize; transistor; zinc oxide;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2190966

Filename

6190709