Title :
Low-Voltage High-Stability Indium–Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum
Author :
Lan, Linfeng ; Zhao, Mingjie ; Xiong, Nana ; Xiao, Peng ; Shi, Wen ; Xu, Miao ; Peng, Junbiao
Author_Institution :
State Key Lab. of Luminescent Mater. & Devices, South China Univ. of Technol., Guangzhou, China
fDate :
6/1/2012 12:00:00 AM
Abstract :
Neodymium-doped aluminum (Al-Nd) was used as a gate electrode and was anodized, forming a layer of Nd:Al2O3 as the dielectric for indium-zinc oxide (IZO) thin-film transistors (TFTs). The Nd:Al2O3 showed high capacitance (110 nF/cm2), high breakdown field (>;6 MV/cm), and low leakage current (<; 10-7 A/cm2 at 2.0 MV/cm) without hillocks when annealed at 300°C. The TFT showed a low operating voltage of 3 V, a low off current of ~10-13 A, a high mobility of 13.7 cm2 · V-1 · s-1, and excellent electrical stability because of the good interface coupling between Nd:Al2O3 and IZO, resulting from the low electronegativities of Al and Nd.
Keywords :
II-VI semiconductors; MOSFET; aluminium compounds; annealing; anodised layers; capacitance; carrier mobility; dielectric thin films; electrodes; electronegativity; indium compounds; leakage currents; low-power electronics; neodymium; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds; IZO; InZnO-Nd:Al2O3; TFT; anodized neodymium-doped aluminum; capacitance; electrical stability; electronegativities; gate electrode; high breakdown field; high mobility; leakage current; low-voltage high-stability indium-zinc oxide thin-film transistor; temperature 300 degC; voltage 3 V; Aluminum oxide; Dielectrics; Leakage current; Logic gates; Stress; Thin film transistors; Al; Nd; anodize; transistor; zinc oxide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2190966
