DocumentCode :
1503863
Title :
Operating TSV in Stable Accumulation Capacitance Region by Utilizing 
-Induced Negative Fixed Charge
Author :
Zhang, L. ; Peng, L. ; Li, H.Y. ; Lo, G.Q. ; Kwong, D.L. ; Tan, C.S.
Volume :
33
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
875
Lastpage :
877
Abstract :
The variation of through-silicon-via (TSV) capacitance caused by nonuniform hot-spot heating can lead to spatial circuit performance variation; this effect is undesirable for 3-D IC design. Hence, stable TSV capacitance is desired to overcome this issue. In this letter, stable TSV capacitance is achieved by utilizing Al2O3-induced negative fixed charge (|Qf| = 7.44 × 1011 cm-2) at the Si-liner interface. This causes a positive shift in the flat-band voltage (ΔVFB = 6.85 V) and results in the TSV operating in the stable accumulation capacitance region within operating voltage of interests (~0-5 V). The leakage current density of the TSV with Al2O3 layer and PETEOS liner is improved by ~10× after annealing in forming gas (N2/H2) at 300 °C for 30 min.
Keywords :
aluminium compounds; annealing; capacitance; integrated circuit design; three-dimensional integrated circuits; 3D IC design; Al2O3; PETEOS liner; Si-liner interface; TSV; annealing; flat-band voltage; induced negative fixed charge; leakage current density; nonuniform hot-spot heating; positive shift; spatial circuit performance variation; stable accumulation capacitance region; temperature 300 degC; through-silicon-via capacitance; time 30 min; voltage 6.85 V; Aluminum oxide; Annealing; Capacitance; Leakage current; Silicon; Substrates; Through-silicon vias; $hbox{Al}_{2}hbox{O}_{3}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2190968
Filename :
6190713
Link To Document :
