Title :
Negative differential conductance in GaAs/AlAs superlattices
Author :
Hadjazi, M. ; Sibille, Alain ; Palmier, J.F. ; Mollot, F.
Author_Institution :
CNET, Bagneux, France
fDate :
6/6/1991 12:00:00 AM
Abstract :
Negative differential conductance has been characterised on a series of n-doped GaAs/AlAs superlattices due to Esaki´s negative effective mass mechanism. High electron peak velocities (up to 107 cm/s) were obtained together with high current densities (up to 150 kA/cm2). These preliminary results are promising for microwave applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor diodes; semiconductor superlattices; solid-state microwave devices; GaAs-AlAs superlattices; microwave applications; negative differential conductance; negative effective mass mechanism;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910684
