• DocumentCode
    1503911
  • Title

    Polarisation control for surface emitting lasers

  • Author

    Shimuzi, M. ; Mukaihara, Toshikazu ; Koyama, Fumio ; Iga, Kenichi

  • Author_Institution
    Tokyo Inst. of Technol. Precision & Intelligence Lab., Yokohama, Japan
  • Volume
    27
  • Issue
    12
  • fYear
    1991
  • fDate
    6/6/1991 12:00:00 AM
  • Firstpage
    1067
  • Lastpage
    1069
  • Abstract
    A polarisation control method for surface emitting lasers is proposed. By preparing high refractive index films on one side of dielectric multilayer reflector walls, a differential loss for orthogonal polarisations can be provided. A GaAlAs-GaAs device was fabricated based on this design and the polarisation control has been demonstrated up to 1.4 times the threshold.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; light polarisation; semiconductor junction lasers; GaAlAs-GaAs device; dielectric multilayer reflector walls; differential loss; high refractive index films; orthogonal polarisations; polarisation control method; semiconductor lasers; surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910662
  • Filename
    76200