DocumentCode :
1503925
Title :
A Low-Noise Dual-Stage a-Si:H Active Pixel Sensor
Author :
Lee, Edward H. ; Kunnen, George R. ; Dominguez, Alfonso ; Allee, David R.
Author_Institution :
Flexible Display Center, Arizona State Univ., Tempe, AZ, USA
Volume :
59
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
1679
Lastpage :
1685
Abstract :
This paper presents a low-noise and low-current autozeroed (AZ) dual-stage active-pixel-sensor circuit with a noise figure of 830 input-referred rms electrons and compares its performance with the conventional pixel with a figure of 1950 electrons. Through the analysis, we show how the dual stage can increase the photoinduced signal transconductance gain while keeping the relative output-referred noise low by using lower bias currents. From the analysis and verified-via-noise measurements, we report a 55% reduction in the input-referred noise using the optimized readout. The new design performs reset autozeroing, which stabilizes the gain every reset period. Using a subthreshold-mode a-Si:H TFT photodetector, the designed AZ dual stage provided the maximum gain with transient light. The dual stage is also less sensitive to electrical degradation induced by stressing but increases the overall pixel size.
Keywords :
X-ray detection; alpha-particle detection; amplifiers; elemental semiconductors; hydrogen; neutron detection; photodetectors; readout electronics; silicon; thin film circuits; Si:H; TFT photodetector; autozeroed dual stage active pixel sensor; low noise dual stage active pixel sensor; photoinduced signal transconductance gain; thin film transistor; Logic gates; Neutrons; Noise; Noise measurement; Thin film transistors; Transconductance; Active pixel sensor (APS); amorphous silicon thin-film transistors (a-Si:H TFT); large-area sensing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2189403
Filename :
6190723
Link To Document :
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